MT46H32M16LFBF-6 IT:C TR Programmable IC Chips Color TV Ic Memory Flash Chip Rectifier Diode

MT46H32M16LFBF-6IT-C Program ic chip Color TV Ic Memory Flash Chip Rectifier Diode
Mobile Double Data Rate (DDR) SDRAM MT46H32M16LF – 8 Meg x 16 x 4 Banks MT46H16M32LF – 4 Meg x 32 x 4 Banks


FEATURES:

• VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V

• Bidirectional data strobe per byte of data (DQS)

• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; centeraligned with data for WRITEs

• Four internal banks for concurrent operation

• Data masks (DM) for masking write data–one mask per byte

• Programmable burst leCM GROUPhs: 2, 4, 8, 16 or full page

• Concurrent auto precharge option is supported

• Auto refresh and self refresh modes

• 1.8V LVCMOS compatible inputs

• On-chip temperature sensor to control refresh rate

• Partial array self refresh (PASR)

• Deep power-down (DPD)

• Selectable output drive (DS)

• Clock stop capability

Options Marking

• VDD/VDDQ

• 1.8V/1.8V H

• Configuration

• 32 Meg x 16(8 Meg x 16 x 4 banks) 32M16

• 16 Meg x 32 (4 Meg x 32 x 4 banks) 16M32

• Plastic Package

• 60-Ball VFBGA1 TBD

• 90-Ball VFBGA 2

• Timing – Cycle Time

• 6ns @ CL = 3 -6

• 7.5ns @ CL = 3 -75

• 10ns @ CL = 3 -10

• Operating Temperature Range

• Commercial (0° to +70°C)

• Industrial (-40°C to +85°C) None IT