ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM.
Features
• VDD = VDDQ = +1.5V ±0.075V
• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• CAS (READ) latency (CL): 5, 6, 7, 8, 9, 10, or 11
• POSTED CAS ADDITIVE latency (AL): 0, CL - 1, CL - 2
• CAS (WRITE) latency (CWL): 5, 6, 7, 8, based on t CK
• Fixed burst leCM GROUPh (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
STOCK LIST
| LM4890MM | 30000 | NSC | 15+ | MSOP-8 |
| MHW6342T | 6304 | MOT | 15+ | CATV |
| CM450HA-5F | 233 | MITSUBI | 14+ | MODULE |
| PM200RSD060 | 230 | MITSUBISH | 05+ | MOUDLE |
| PM200RSA060 | 120 | MITSUBISH | 13+ | MOUDLE |
| MSM5219BGS-K-7 | 550 | OKI | 14+ | QFP |
| PS11003-C | 500 | MITSUBISH | 12+ | MODULE |
| MB87020PF-G-BND | 3531 | FUJITSU | 14+ | QFP |
| MA2820 | 7689 | SHINDENG | 16+ | ZIP |
| 7MBP150RTB060 | 210 | FUJI | 12+ | MODULE |
| MBM200HS6B | 629 | HITACHI | 14+ | MODULE |
| PM25RSK120 | 320 | MITSUBISH | 10+ | MOUDLE |
| QM150DY-H | 150 | MITSUBISH | 13+ | MODULE |
| PWB130A40 | 120 | SANREX | 14+ | MODULE |
| LA1185 | 3928 | SANYO | 14+ | SIP9 |
| BSM25GP120 | 458 | EUPEC | 15+ | MODULE |
| LM2750LD-ADJ | 3000 | NSC | 14+ | QFN |
| NCN1188MUTAG | 8480 | ON | 16+ | UQFN |
| NCN1154MUTAG | 8400 | ON | 16+ | UQFN |
| LM2745MTCX | 3000 | NSC | 14+ | TSSOP-14 |
| L78L05ABD | 10000 | ST | 15+ | SOP8 |
| AT24C08BN-SH | 5000 | ATMEL | 15+ | SOP-8 |
| PS21563-P | 500 | MITSUBISH | 12+ | MODULE |
| BNX003-01 | 2058 | MURATA | 14+ | DIP |
| LTC4441IMSE | 6207 | LINEAR | 14+ | MSOP |
| PA0173NLT | 7386 | PULSE | 16+ | SOP |