ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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Schottky Barrier Diode Electronics Diodes IC Chip BAS85
BAS85 Schottky barrier diode
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed small SMD package.
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
SYMBOL PARAMETER CONDITIONS
MIN. MAX. UNIT VR continuous reverse voltage − 30 V
IF continuous forward current − 200 mA
IF(AV) average forward current VRWM = 25 V; a = 1.57; δ = 0.5;
note 1; Fig.2 − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA I
FSM non-repetitive peak forward current tp = 10 ms − 5 A
Tstg storage temperature −65 +150 °C
Tj junction temperature − 125 °C
Tamb operating ambient temperature −65 +125 °C
| SYMBOL | PARAMETER | CONDITIONS | MAX | UNIT |
| VF | Forward Voltage |
IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA |
240 320 400 500 800 |
mV mV mV mV mV |
| IR | Vr=25V | 2.3 | uA | |
| Cd | diode capacitance | f=1 MHz Vr=1V | 10 | pF |
