ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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Switching (200V, 10A)
RDN100N20
Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
Application
Switching
Structure
Silicon N-channel
MOS FET
Absolute maximum ratings (Ta=25°C)
| Parameter | Symbol | Limits | Unit | |
| Drain-Source Voltage | VDSS | 200 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Drain Current | Continuous | ID | 10 | A |
| Pulsed | IDP *1 | 40 | A | |
| Reverse Drain Current | Continuous | IDR | 10 | A |
| Pulsed | IDRP *1 | 40 | A | |
| Avalanche Current | IAS *2 | 10 | A | |
| Avalanche Energy | EAS *2 | 120 | mJ | |
| Total Power Dissipation (TC=25°C) | PD | 35 | W | |
| Channel Temperature | Tch | 150 | °C | |
| Storage Temperature | Tstg | −55 to +150 | °C | |
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
External dimensions (Unit : mm)
Equivalent circuit
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Stock Offer (Hot Sell)
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