ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching transistor

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching transistor

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Model Number :2N3906
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :9600pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Description :Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92
collector-base voltage :−40 V
collector-emitter voltage :−40 V
emitter-base voltage :−6 V
total power dissipation :500 mW
storage temperature :−65 to +150 °C
operating ambient temperature :−65 to +150 °C
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PNP switching transistor 2N3906

FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).

APPLICATIONS
• High-speed switching in industrial applications.

DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904.

PINNING

PINDESCRIPTION
1collector
2base
3emitter








LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
VCBOcollector-base voltageopen emitter−40V
VCEOcollector-emitter voltageopen base−40V
VEBOemitter-base voltageopen collector−6V
ICcollector current (DC) −200mA
ICMpeak collector current −300mA
IBMpeak base current −100mA
Ptottotal power dissipationTamb ≤ 25 °C500mW
Tstgstorage temperature −65+150°C
Tjjunction temperature 150°C
Tamboperating ambient temperature −65+150°C

Fig.2 DC current gain; typical values.

Fig.3 Test circuit for switching times


PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54


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