Single high-speed switching diode, fabricated in planar technology, and encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Features

■ High switching speed: t_rr ≤ 4 ns

■ Low capacitance: C_d ≤ 1.5 pF

■ Low leakage current

■ Reverse voltage: V_R ≤ 100 V

■ Repetitive peak reverse voltage: V_RRM ≤ 100 V

■ Small SMD plastic package

Applications

■ High-speed switching

Quick reference data

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
I_F	forward current	[1]	-	-	215	mA
V_R	reverse voltage		-	-	100	V
t_rr	reverse recovery time	[2]	-	-	4	ns

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions	Min	Max	Unit
V_RRM	repetitive peak reverse voltage		-	100	V
V_R	reverse voltage		-	100	V
I_F	forward current	[1]	-	215	mA
I_FRM	repetitive peak forward current		-	500	mA
I_FSM	non-repetitive peak forward current	square wave [2]
		tp = 1 µs	-	4	A
		tp = 1 ms	-	1	A
		tp = 1 s	-	0.5	A
P_tot	total power dissipation	Tamb ≤ 25 °C [1][3]	-	250	mW
T_j	junction temperature		-	150	°C
T_stg	storage temperature		−65	+150	°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Tj = 25 °C prior to surge.

[3] Soldering point of cathode tab.

Reverse recovery time test circuit and waveforms

Forward recovery voltage test circuit and waveforms

Package outline SOT23 (TO-236AB)

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