ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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BC807-25 Power Mosfet Transistor PNP general purpose transistor

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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BC807-25 Power Mosfet Transistor PNP general purpose transistor

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Model Number :BC807-25
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :7800pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Description :Bipolar (BJT) Transistor PNP 45 V 500 mA 100MHz 300 mW Surface Mount SOT-23
collector-base voltage :−50 V
collector-emitter voltage :−45 V
emitter-base voltage :−5 V
collector current (DC) :−500 mA
peak base current :−200 mA
total power dissipation :250 mW
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BC807 PNP general purpose transistor

FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).

APPLICATIONS
• General purpose switching and amplification.

Fig.1 Simplified outline (SOT23) and symbol.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC817.

PINNING

PIN DESCRIPTION
1 base
2 emitter
3 collector


LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −50 V
VCEO collector-emitter voltage open base; IC = −10 mA −45 V
VEBO emitter-base voltage open collector −5 V
IC collector current (DC) −500 mA
ICM peak collector current −1 A
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 250 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature 150 °C
Tamb operating ambient temperature −65 +150 °C

Note 1. Transistor mounted on an FR4 printed-circuit board.

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23



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