ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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STP21NM50N-STF21NM50N-STW21NM50N
STB21NM50N - STB21NM50N-1
N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET
General Features
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
DESCRIPTION
The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
APPLICATIONS
The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Absolute Maximum ratings
| Symbol | Parameter | Value | Unit | |
|---|---|---|---|---|
| TO-220 / D2PAK / I2PAK / TO-247 | TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 500 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 500 | V | |
| VGS | Gate- source Voltage | ±25 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 18 | 18 (*) | A |
| ID | Drain Current (continuous) at TC = 100°C | 11 | 11 (*) | A |
| IDM (•) | Drain Current (pulsed) | 72 | 72 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 140 | 30 | W |
| Derating Factor | 1.12 | 0.23 | W/°C | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 15 | V/ns | |
| Viso | Insulation Winthstand Voltage (DC) | -- | 2500 | V |
| Tstg | Storage Temperature | –55 to 150 | °C | |
| Tj | Max. Operating Junction Temperature | 150 | °C | |
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS
Stock Offer (Hot Sell)
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