ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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PDP SWITCH IRFB4229PbF
Features
• Advanced Process Technology
• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
• Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,
Energy Recovery and Pass Switch Applications
• Low QG for Fast Response
• High Repetitive Peak Current Capability for Reliable Operation
• Short Fall & Rise Times for Fast Switching
• 175°C Operating Junction Temperature for Improved Ruggedness
• Repetitive Avalanche Capability for Robustness and Reliability
Key Parameters
| VDS min | 250 | V |
| VDS (Avalanche) typ. | 300 | V |
| RDS(ON) typ. @ 10V | 38 | mΩ |
| IRP max @ TC= 100°C | 91 | A |
| TJ max | 175 | °C |
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| VGS | Gate-to-Source Voltage | ±30 | V |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 46 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 33 | A |
| IDM | Pulsed Drain Current | 180 | A |
| IRP @ TC = 100°C | Repetitive Peak Current | 91 | A |
| PD @TC = 25°C | Power Dissipation | 330 | W |
| PD @TC = 100°C | Power Dissipation | 190 | W |
| Linear Derating Factor | 2.2 | W/°C | |
| TJ TSTG | Operating Junction and Storage Temperature Range | -40 to + 175 | °C |
| Soldering Temperature for 10 seconds | 300 | °C | |
| Mounting Torque, 6-32 or M3 Screw | 10lbin (1.1Nm) | N |
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