ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

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Model Number :2SC5200
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :10000pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Description :Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-264
Collector-Base Voltage :230 V
Collector-Emitter Voltage :230 V
Emitter-Base Voltage :5 V
Collector Current(DC) :15 A
Base Current :1.5 A
Junction and Storage Temperature :- 50 ~ +150 °C
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2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

-- TO3P package, 2SC5242/FJA4313 : 130 watts

-- TO220 package, FJP5200 : 80 watts

-- TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol Parameter Ratings Units
BVCBO Collector-Base Voltage 230 V
BVCEO Collector-Emitter Voltage 230 V
BVEBO Emitter-Base Voltage 5 V
IC Collector Current(DC) 15 A
IB Base Current 1.5 A
PD

Total Device Dissipation(TC=25°C)

Derate above 25°C

150

1.04

W

W/°C

TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

Symbol Parameter Max Units
RθJC Thermal Resistance, Junction to Case 0.83 °C/W

* Device mounted on minimum pad size

hFE Classification

Classification R O
hFE1 55 ~ 110 80 ~ 160

Typical Characteristics

Package Dimensions

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