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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

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Country/Region:china
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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

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Brand Name :IXYS
Model Number :IXFH60N50P3
Certification :Original Factory Pack
Place of Origin :Philippines
MOQ :20
Price :Negotiate
Payment Terms :T/T, Western Union,Paypal
Supply Ability :20000
Delivery Time :1
Packaging Details :please contact me for details
Description :N-Channel 500 V 60A (Tc) 1040W (Tc) Through Hole TO-247AD (IXFH)
IXFQ :TO-3P
IXFH :TO-247
Features :Fast Intrinsic Rectifier ,Avalanche Rated ,Low RDS(ON) and QG
Advantages :z High Power Density z Easy to Mount z Space Savings
Applications :Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives
Weight :TO-268 4.0 g TO-3P 5.5 g TO-247 6.0 g
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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V

Power MOSFET IXFQ60N50P3 I D25 = 60A

IXFH60N50P3 RDS(on) ≤ 100mΩ

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Symbol Test Conditions Maximum Ratings

VDSS

VDGR

TJ = 25°C to 150°C

TJ = 25°C to 150°C, RGS = 1MΩ

500 V

500 V

VGSS

VGSM

Continuous

Transient

± 30 V

± 40 V

I D25

I DM

TC = 25°C

TC = 25°C, Pulse Width Limited by TJM

60 A

150 A

I A

EAS

TC = 25°C

TC = 25°C

30 A

1 J

dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns
PD TC = 25°C 1040 W

TJ

TJM

Tstg

-55 ... +150 °C

150 °C

-55 ... +150 °C

TL

Tsold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300 °C

260 °C

Md Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in.
Weight

TO-268

TO-3P

TO-247

4.0 g

5.5 g

6.0 g

Features

Fast Intrinsic Rectifier

Avalanche Rated

Low RDS(ON) and QG

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode Power Supplies

DC-DC Converters z Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC

Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature

Fig. 5. RDS(on) Normalized to ID = 30A Value vs. 6. Maximum Drain Current vs. Case Drain CurrentFig. Temperature

Fig. 7. Input Admittance Fig. 8. Transconductance

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