ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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IRFP150N Transistor Electronics Components electronic devices
N-Channel Power MOSFET
Features
• Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER© Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
| C.I MM74HC164MX | FSC | P0552AD/P9FAD | SOP-14 |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| RES 2010 330R 5% CRCW2010330RJNEF | VISHAY | 1612 | SMD2010 |
| RES 2010 68K 5% CRCW201068K0JNEF | VISHAY | 1612 | SMD2010 |
| C.I MCP6S26-I/SL | MICROCHIP | 16255C4 | SOP-14 |
| ACOPLADOR. PC817A | SHARP | 2016.08.10/H33 | DIP-4 |
| TRANS 2SS52M | Honeywell | 2SSM/523-LF | TO-92 |
| C.I SCC2691AC1D24 | 1149+ | SOP-24 | |
| C.I TP3057WM | TI | XM33AF | SOP-16 |
| C.I CD14538BE | TI | 33ADS8K | DIP-16 |
| C.I CL2N8-G | MICROCHIP | CL2C | SOT-89 |
| C.I SN75179BP | TI | 57C50DM | DIP-8 |
| C.I L6219DS | ST | 135 | SOP-24 |
| CAP 1210 470PF 1KV NP0 CL32C471JIINNNE | SAMSUNG | AC7JO2H | SMD1210 |
| INDUTOR 3.3UH SLF6045T-3R3N2R8-3PF | TDK | YA16H0945122/3R3 | SMD6045 |
| CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SR | PAN | Y1628F843536/2.2/50V/SYK | SMD4*5.4 |
| C.I 24LC256-I/SN | MICROCHIP | 1636M6G | SOP-8 |
| CAP ELCO SMD 150UF 25V UCD1E151MNL1GS | NICHICON | 160602/150/25V/H72 | SMD8*10.5 |
| RES RC0805JR-0727RL | YAGEO | 1538 | SMD0805 |
| C.I SN75240PW | TI | 11/A75240 | MSOP-8 |
| RES RC0805JR-0715KL | YAGEO | 1637 | SMD0805 |
| CAP CER 0805 1UF 10V X7R LMK212BJ105MG-T | TAIYOYUDEN | 1608 | SMD0805 |
| CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNE | SAMSUNG | AC7JO2H | SMD0805 |
| RES 0805 28K7 RC0805FR-0728K7L 1% | YAGEO | 1638 | SMD0805 |
| RES 3K3 5% CASE 0805RC0805JR-073K3L | YAGEO | 1623 | SMD0805 |
| TRIAC BTA26-600BRG | ST | 628 | TO-3P |
| CAP 0805 330NF 100V C2012X7S2A334K125AB | TDK | IB16F15763SD | SMD0805 |
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . VDGR 100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . VGS ±20 V
Drain Current Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . .. . . . . . . . . . . . . ID
Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 44 31
Figure 4 A A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . .UIS
Figures 6, 14, 15 Power Dissipation . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 155 1.03 W W/oC
Operating and Storage Temperature . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. ... . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . Tpkg 300 260 oC oC