This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	30		V
Qg	Gate Charge Total (4.5 V)	30		nC
Qgd	Gate Charge Gate-to-Drain	7.5		nC
RDS(on)	Drain-to-Source On-Resistance	VGS = 4.5 V	1.5	mΩ
		VGS =10V	1.2
VGS(th)	Threshold Voltage	1.4		V

Device Information

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD17556Q5B	2500	13-Inch Reel	SON 5.00-mm × 6.00-mm Plastic Package	Tape and Reel
CSD17556Q5BT	250	13-Inch Reel	SON 5.00-mm × 6.00-mm Plastic Package	Tape and Reel

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package Limited)	100	A
	Continuous Drain Current (Silicon Limited), TC = 25°C	215
	Continuous Drain Current(1)	34
IDM	Pulsed Drain Current, TA = 25°C(1)(2)	400	A
PD	Power Dissipation(1)	3.1	W
PD	Power Dissipation, TC = 25°C	191	W
TJ, Tstg	Operating Junction, Storage Temperature	–55 to 150	°C
EAS	Avalanche Energy, Single Pulse ID =100A,L=0.1mH,RG =25Ω	500	mJ

CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs

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