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CHONGMING GROUP (HK) INT'L CO., LTD.

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STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package

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China STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package wholesale
  • China STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package wholesale

STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package
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Brand Name :ST
Model Number :STP110N8F6
MOQ :Contact us
Price :Contact us
Payment Terms :Paypal, Western Union, TT
Supply Ability :50000 Pieces per Day
Delivery Time :The goods will be shipped within 3 days once received fund
Packaging Details :TO-220
Description :MOSFET N-CH 80V 110A TO220
Pd - Power Dissipation :200 W
Maximum Operating Temperature :+ 175 C
Minimum Operating Temperature :- 55 C
Qg - Gate Charge :150 nC
Vgs - Gate-Source Voltage :10 V
Vgs th - Gate-Source Threshold Voltage :2.5 V
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STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package

Features

Order code

VDS

RDS(on)max

ID

PTOT

STP110N8F6

80 V

0.0065 Ω

110 A

200 W

  • Very low on-resistance

  • Very low gate charge

  • High avalanche ruggedness

  • Low gate drive power loss

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET developed using the STripFETTM F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

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