ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

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Brand Name :TI
Model Number :2N7002LT1G
MOQ :Contact us
Price :Contact us
Payment Terms :Paypal, Western Union, TT
Supply Ability :50000 Pieces per Day
Delivery Time :The goods will be shipped within 3 days once received fund
Packaging Details :SOT23-3
Description :N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Product Type :MOSFET
Subcategory :MOSFETs
Minimum Operating Temperature :- 55 C
Maximum Operating Temperature :+ 150 C
Rds On - Drain-Source Resistance :7.5 Ohms
Vgs th - Gate-Source Threshold Voltage :1 V
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2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel

Features

• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−Source Voltage

VDSS

60

Vdc

Drain−Gate Voltage (RGS = 1.0 MW)

VDGR

60

Vdc

Drain Current
− Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2)

ID

ID IDM

± 115 ± 75 ± 800

mAdc

Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)

VGS VGSM

± 20 ± 40

Vdc Vpk

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board (Note 3) TA = 25°C
Derate above 25°C

Thermal Resistance, Junction−to−Ambient

PD RqJA

225 1.8 556

mW mW/°C °C/W

Total Device Dissipation
(Note 4) Alumina Substrate, TA = 25°C Derate above 25°C

Thermal Resistance, Junction−to−Ambient

PD RqJA

300 2.4 417

mW mW/°C °C/W

Junction and Storage Temperature

TJ, Tstg

− 55 to +150

°C

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